[h h l]Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design
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Abstract
In this work, we present a theoretical analysis of the anisotropic hole subband states and optical gain spectra for various growth directions [h h l] such as [00 1], [1 1 0], [1 1 2], [1 1 3] and [1 1 1] of dilute-nitride InAs1-x Nx /GaSb with a 'W' and 'M' design. We show that the dispersion relation of hole subband states, hole effective mass, optical gain and threshold current density in [1 1 1] direction differ considerably from the other directions in particular the habitual direction [0 0 1]. There is a slight difference between the results of optical and modal gain for the other [1 1 0], [1 1 2] and [1 1 3] growth directions. Finally, we can predict that the optical performance of the 'M' design structure is more convenient for an emission in the mid-infrared (MIR) than that of the 'W' QW structure for x = 0.02.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">[h h l]Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design</title><author><name sortKey="Ahmed, A Ben" uniqKey="Ahmed A">A. Ben Ahmed</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des Matériaux Avancées et Phénomènes Quantiques, Département de Physique, Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus Universitaire</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2092 Tunis</wicri:noRegion></affiliation></author><author><name sortKey="Ridene, S" uniqKey="Ridene S">S. Ridene</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des Matériaux Avancées et Phénomènes Quantiques, Département de Physique, Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus Universitaire</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2092 Tunis</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de physique, Faculté des Sciences de Bizerte, Université de Carthage</s1><s2>7021 Zarzouna, Bizerte</s2><s3>TUN</s3><sZ>2 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>7021 Zarzouna, Bizerte</wicri:noRegion></affiliation></author><author><name sortKey="Debbichi, M" uniqKey="Debbichi M">M. Debbichi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Said, M" uniqKey="Said M">M. Saïd</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Bouchriha, H" uniqKey="Bouchriha H">H. Bouchriha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des Matériaux Avancées et Phénomènes Quantiques, Département de Physique, Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus Universitaire</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2092 Tunis</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0285527</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0285527 INIST</idno><idno type="RBID">Pascal:13-0285527</idno><idno type="wicri:Area/Main/Corpus">000863</idno><idno type="wicri:Area/Main/Repository">000216</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term><term>Dispersion relations</term><term>Effective mass</term><term>Gallium antimonides</term><term>Indium arsenides</term><term>Laser diodes</term><term>Nitrogen additions</term><term>Quantum well lasers</term><term>Subband</term><term>Threshold current</term><term>Valence bands</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser puits quantique</term><term>Anisotropie</term><term>Sous bande</term><term>Relation dispersion</term><term>Masse effective</term><term>Courant seuil</term><term>Bande valence</term><term>Diode laser</term><term>Addition azote</term><term>Antimoniure de gallium</term><term>Arséniure d'indium</term><term>GaSb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, we present a theoretical analysis of the anisotropic hole subband states and optical gain spectra for various growth directions [h h l] such as [00 1], [1 1 0], [1 1 2], [1 1 3] and [1 1 1] of dilute-nitride InAs<sub>1-x</sub> N<sub>x</sub> /GaSb with a 'W' and 'M' design. We show that the dispersion relation of hole subband states, hole effective mass, optical gain and threshold current density in [1 1 1] direction differ considerably from the other directions in particular the habitual direction [0 0 1]. There is a slight difference between the results of optical and modal gain for the other [1 1 0], [1 1 2] and [1 1 3] growth directions. Finally, we can predict that the optical performance of the 'M' design structure is more convenient for an emission in the mid-infrared (MIR) than that of the 'W' QW structure for x = 0.02.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>[h h l]Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design</s1></fA08><fA11 i1="01" i2="1"><s1>AHMED (A. Ben)</s1></fA11><fA11 i1="02" i2="1"><s1>RIDENE (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEBBICHI (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>SAÏD (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>BOUCHRIHA (H.)</s1></fA11><fA14 i1="01"><s1>Laboratoire des Matériaux Avancées et Phénomènes Quantiques, Département de Physique, Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus Universitaire</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Département de physique, Faculté des Sciences de Bizerte, Université de Carthage</s1><s2>7021 Zarzouna, Bizerte</s2><s3>TUN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s2>065006.1-065006.10</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000503027290060</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0285527</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work, we present a theoretical analysis of the anisotropic hole subband states and optical gain spectra for various growth directions [h h l] such as [00 1], [1 1 0], [1 1 2], [1 1 3] and [1 1 1] of dilute-nitride InAs<sub>1-x</sub> N<sub>x</sub> /GaSb with a 'W' and 'M' design. We show that the dispersion relation of hole subband states, hole effective mass, optical gain and threshold current density in [1 1 1] direction differ considerably from the other directions in particular the habitual direction [0 0 1]. There is a slight difference between the results of optical and modal gain for the other [1 1 0], [1 1 2] and [1 1 3] growth directions. Finally, we can predict that the optical performance of the 'M' design structure is more convenient for an emission in the mid-infrared (MIR) than that of the 'W' QW structure for x = 0.02.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser puits quantique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Quantum well lasers</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Anisotropie</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Anisotropy</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Sous bande</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Subband</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Subbanda</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Relation dispersion</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Dispersion relations</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Masse effective</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Effective mass</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Courant seuil</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Threshold current</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Bande valence</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Valence bands</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diode laser</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Laser diodes</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Addition azote</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Nitrogen additions</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Antimoniure de gallium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>GaSb</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>273</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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